STW20NA50 n - channel enhancement mode fast power mos transistor n typical r ds(on) = 0.22 w n 30v gate to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gate gharge minimized n reduced threshold voltage spread description this series of power mosfets represents the most advanced high voltage technology. the op- timized cell layout coupled with a new proprietary edge termination concur to give the device low r ds(on) and gate charge, unequalled ruggedness and superior switching performance. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive internal schematic diagram type v dss r ds(on) i d STW20NA50 500 v < 0.27 w 20 a 1 2 3 to-247 december 1996 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 500 v v dgr drain- gate voltage (r gs = 20 k w )500v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c20a i d drain current (continuous) at t c = 100 o c12.7a i dm ( ) drain current (pulsed) 80 a p tot total dissipation at t c = 25 o c250w derating factor 2 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area 1/9
thermal data r thj-case r thj-amb r thj-amb t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 0.5 30 0.1 300 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 20 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 1000 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 8mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 12.7 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 25 250 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 2.25 3 3.75 v r ds(on) static drain-source on resistance v gs = 10v i d = 10 a 0.22 0.27 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 20 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds > i d(on) x r ds(on)max i d = 10 a 10 17.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 3600 490 140 4700 650 180 pf pf pf STW20NA50 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 250 v i d = 10 a r g = 4.7 w v gs = 10 v (see test circuit, figure 3) 30 55 40 75 ns ns (di/dt) on turn-on current slope v dd = 400 v i d = 20 a r g = 47 w v gs = 10 v (see test circuit, figure 5) 160 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v i d = 20 a v gs = 10 v 150 18 72 195 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 400 v i d = 20 a r g = 4.7 w v gs = 10 v (see test circuit, figure 5) 40 25 75 55 35 100 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 20 80 a a v sd ( * ) forward on voltage i sd = 20 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c (see test circuit, figure 5) 610 10.1 33 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating areas thermal impedance STW20NA50 3/9
derating curve transfer characteristics static drain-source on resistance output characteristics transconductance gate charge vs gate-source voltage STW20NA50 4/9
capacitance variations normalized gate threshold voltage vs temperature normalized on resistance vs temperature turn-on current slope cross-over time turn-off drain-source voltage slope STW20NA50 5/9
switching safe operating area accidental overload area source-drain diode forward characteristics fig. 1: unclamped inductive load test circuits fig. 2: unclamped inductive waveforms STW20NA50 6/9
fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times fig. 3: switching times test circuits for resistive load STW20NA50 7/9
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.208 a1 2.87 0.113 a2 1.5 2.5 0.059 0.098 b 1 1.4 0.039 0.055 b1 2.25 0.088 b2 3.05 3.43 0.120 0.135 c 0.4 0.8 0.015 0.031 d 20.4 21.18 0.803 0.833 e 5.43 5.47 0.213 0.215 e 15.3 15.95 0.602 0.628 l 15.57 0.613 l1 3.7 4.3 0.145 0.169 q 5.3 5.84 0.208 0.230 ?p 3.5 3.71 0.137 0.146 d q ? a a2 a1 c e e b1 b b2 l l1 to-247 mechanical data STW20NA50 8/9
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1996 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the n etherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . STW20NA50 9/9
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